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Specific Features of Formation of Electron and Hole Trapping Centers in Irradiated CaSO4-Mn and BaSO4-Mn

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dc.contributor.author Nurakhmetov, Turlybek. N.
dc.contributor.author Alibay, Temirulan. T.
dc.contributor.author Zhangylyssov, Keleshek. B.
dc.contributor.author Daurenbekov, Dulat. H.
dc.contributor.author Zhunusbekov, Amangeldy. M.
dc.contributor.author Kainarbay, Aset. Zh.
dc.contributor.author Sadykova, Batsaiy. M.
dc.contributor.author Tolekov, Doszhan. A.
dc.contributor.author Shamiyeva, Raushan. K.
dc.date.accessioned 2024-09-17T09:33:41Z
dc.date.available 2024-09-17T09:33:41Z
dc.date.issued 2023
dc.identifier.citation Nurakhmetov, T.N.; Alibay, T.T.; Zhangylyssov, K.B.; Daurenbekov, D.H.; Zhunusbekov, A.M.; Kainarbay, A.Z.; Sadykova, B.M.; Tolekov, D.A.; Shamiyeva, R.K. Specific Features of Formation of Electron and Hole Trapping Centers in Irradiated CaSO4-Mn and BaSO4-Mn. Crystals 2023, 13, 1054. https://doi.org/ 10.3390/cryst13071054 ru
dc.identifier.issn 2073-4352
dc.identifier.other doi.org/10.3390/cryst13071054
dc.identifier.uri http://rep.enu.kz/handle/enu/16482
dc.description.abstract Spectroscopic and thermoactivation methods were used to study the processes of accumulation of electron and hole trapping centers and energy transfer of electronic excitations to impurities in CaSO4 -Mn and BaSO4 -Mn. It is shown that electronic trapping centers are created during the excitation of an anionic complex as a result of charge transfer from O2− → SO2− 4 to closely spaced anionic complexes SO2− 4 in CaSO4 and BaSO4 . In CaSO4 and BaSO4 , energy transfer from the host to impurities occurs at the moment of charge transfer from the excited anionic complex to the combined radiative electronic state at 2.95–3.1 eV. This combined state is formed from electronic trapping centers Mn+-SO− 4 and SO3− 4 -SO− 4 . It was found that the emerging combined radiative states at 2.95–3.1 eV of sulfates, which are formed as a result of charge transfer from the excited anionic complexes to the excited state of impurities, Tl+, Cu+, and Mn2+, occupy the same energy levels as the intrinsic electronic trapping center SO3− 4 of the host at 2.95–3.17 eV. Experimental results show that during UV photon irradiation, anionic complexes are excited mainly near impurities in sulfates. ru
dc.language.iso en ru
dc.publisher Crystals ru
dc.relation.ispartofseries Volume 13;Issue 7
dc.subject intrinsic emission ru
dc.subject recombination ru
dc.subject electron-hole trapping centers ru
dc.subject sulfate ru
dc.subject phosphor ru
dc.title Specific Features of Formation of Electron and Hole Trapping Centers in Irradiated CaSO4-Mn and BaSO4-Mn ru
dc.type Article ru


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