Репозиторий Dspace

Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms

Показать сокращенную информацию

dc.contributor.author Suchikova, Yana
dc.contributor.author Kovachov, Sergii
dc.contributor.author Bohdanov, Ihor
dc.contributor.author Konuhova, Marina
dc.contributor.author Zhydachevskyy, Yaroslav
dc.contributor.author Kumarbekov, Kuat
dc.contributor.author Pankratov, Vladimir
dc.contributor.author Popov, Anatoli I.
dc.date.accessioned 2024-09-24T13:11:18Z
dc.date.available 2024-09-24T13:11:18Z
dc.date.issued 2024
dc.identifier.citation Suchikova, Y.; Kovachov, S.; Bohdanov, I.; Konuhova, M.; Zhydachevskyy, Y.; Kumarbekov, K.; Pankratov, V.; Popov, A.I. Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms. Crystals 2024, 14, 633. https:// doi.org/10.3390/cryst14070633 ru
dc.identifier.issn 2073-4352
dc.identifier.other doi.org/10.3390/cryst14070633
dc.identifier.uri http://rep.enu.kz/handle/enu/16945
dc.description.abstract This study focuses on the wet chemical synthesis of AlxGa1−xAs nanostructures, highlighting how different deposition conditions affect the film morphology and material properties. Electrochemical etching was used to texture GaAs substrates, enhancing mechanical adhesion and chemical bonding. Various deposition regimes, including voltage switching, gradual voltage increase, and pulsed voltage, were applied to explore their impact on the film growth mechanisms. SEM analysis revealed distinct morphologies, EDX confirmed variations in aluminum content, Raman spectroscopy detected structural disorders, and XRD analysis demonstrated peak position shifts. The findings emphasize the versatility and cost-effectiveness of wet electrochemical methods for fabricating high-quality AlxGa1−xAs films with tailored properties, showing potential for optoelectronic devices, high-efficiency solar cells, and other advanced semiconductor applications. ru
dc.language.iso en ru
dc.publisher Crystal ru
dc.subject AlxGa1−xAs ru
dc.subject wet chemical synthesis ru
dc.subject electrochemical deposition ru
dc.subject morphology ru
dc.subject electrochemical etching ru
dc.subject SEM ru
dc.subject EDX ru
dc.subject Raman spectroscopy ru
dc.subject XRD ru
dc.subject semiconductors ru
dc.title Wet Chemical Synthesis of AlxGa1−xAs Nanostructures: Investigation of Properties and Growth Mechanisms ru
dc.type Article ru


Файлы в этом документе

Данный элемент включен в следующие коллекции

Показать сокращенную информацию

Поиск в DSpace


Просмотр

Моя учетная запись