Parkhomenkо, Irina; Vlasukova, Liudmila; Komarov, Fadei; Kovalchuk, Nataliya; Demidovich, Sergey; Zhussupbekova, Ainur; Zhussupbekov, Kuanysh; Shvets, Igor V.; Milchanin, Oleg; Zhigulin, Dmitry; Romanov, Ivan
(ACS Omega, 2023)
Silicon nitride, silicon oxide, and silicon oxynitride thin films
were deposited on the Si substrate by inductively coupled plasma chemical
vapor deposition and annealed at 1100 °C for 3 min in an Ar environment.
Silicon ...