Zhumazhanova, Ainash; Mutali, Alisher; Ibrayeva, Anel; Skuratov, Vladimir; Dauletbekova, Alma; Korneeva, Ekaterina; Akilbekov, Abdirash; Zdorovets, Maxim
(Crystals, 2021)
A depth-resolved Raman spectroscopy technique was used to study the residual stress
profiles in polycrystalline silicon nitride that was irradiated with Xe (167 MeV, 1 × 1011 cm−2 ÷
4.87 × 1013 cm−2
) and Bi (710 MeV, ...