Abstract:
The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu
crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic
electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers,
the energy of the recombination processes is transferred to impurities.
