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Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals

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dc.contributor.author Nurakhmetov, T.N.
dc.contributor.author Yussupbekova, B.N.
dc.contributor.author Zhunusbekov, A.M.
dc.contributor.author Daurenbekov, D.H.
dc.contributor.author Sadykova, B.M.
dc.contributor.author Zhangylyssov, K.B.
dc.contributor.author Alibay, T.T.
dc.contributor.author Tolekov, D.A.
dc.date.accessioned 2024-04-02T06:09:27Z
dc.date.available 2024-04-02T06:09:27Z
dc.date.issued 2021
dc.identifier.issn 2522-9869
dc.identifier.other DOI: 10.32523/ejpfm.2021050305
dc.identifier.uri http://rep.enu.kz/handle/enu/13238
dc.description.abstract The mechanisms of creation of impurity and intrinsic electron-hole trapping centers in Na2SO4 − Cu crystals have been investigated by spectroscopic methods. It is shown that impurity and intrinsic electron-hole trapping centers in the crystal lattice Na2SO4 − Cu are created in the same energy distances approximately 3.87-4.0 eV and 4.43-4.5 eV. During the annealing of electron-hole trapping centers, the energy of the recombination processes is transferred to impurities ru
dc.language.iso en ru
dc.publisher Eurasian Journal of Physics and Functional Materials ru
dc.relation.ispartofseries Vol.5;3
dc.subject alkali metal sulfates ru
dc.subject electron-hole pairs ru
dc.subject glow centers ru
dc.subject phosphorescence ru
dc.subject recombination emission ru
dc.subject impurity ru
dc.subject TSL ru
dc.title Influence of Cu+ impurity on the efficiency of creation of electron-hole trapping centers in irradiated Na2SO4 − Cu crystals ru
dc.type Article ru


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