DSpace Repository

Etching of latent tracks in amorphous SiO2 and Si3N4: Simulation and experiment

Show simple item record

dc.contributor.author Vlasukova, L.
dc.contributor.author Komarov, F.
dc.contributor.author Yuvchenko, V.
dc.contributor.author Baran, L.
dc.contributor.author Milchanin, O.
dc.contributor.author Dauletbekova, А.
dc.contributor.author Alzhanova, A.
dc.contributor.author Akilbekov, A.
dc.date.accessioned 2023-09-21T06:00:12Z
dc.date.available 2023-09-21T06:00:12Z
dc.date.issued 2016
dc.identifier.issn 0042-207X
dc.identifier.uri http://rep.enu.kz/handle/enu/7501
dc.description.abstract The latent track formation in silicon dioxide (SiO2) and silicon nitride (Si3N4) irradiated with swift heavy ions (SHI) has been studied using computer simulation in the frame of the thermal spike model. We have calculated radii and lifetime of the molten regions, or the regions heated to the melting point, formed in SiO2 and Si3N4 along the ion trajectories for F, S, Cl, Ar, Kr and Xe ions in an energy range of (28–200) MeV. The radius of the molten region was chosen as a criterion for track “etchability” in the case of SiO2. The results of computer simulation have been compared with the experimental results of track etching in 4% aqueous solution of hydrofluoric acid (HF). The validity of the criterion taken for the creation of homogeneous “etchable” ion tracks in SiO2, namely, the formation of a molten region with radius larger than 3.0 nm [1] in the matrix along the ion trajectory, has been confirmed. It has been found that both the etched track depth and diameter increase with the fluence for the same type of ion species. Under our experimental conditions, for the case of Si3N4 we failed to etch regular conical channels with uniform size distribution. ru
dc.language.iso en ru
dc.publisher Vacuum ru
dc.relation.ispartofseries Volume 129;Pages 137 - 141
dc.subject Latent track etching ru
dc.subject Nanopores ru
dc.subject Si3N4/Si ru
dc.subject SiO2/Si ru
dc.subject Swift heavy ion ru
dc.subject Thermal spike model ru
dc.title Etching of latent tracks in amorphous SiO2 and Si3N4: Simulation and experiment ru
dc.type Article ru


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Browse

My Account