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Ion track template technique for fabrication of ZnSe2O5 nanocrystals

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dc.contributor.author Akilbekov, A.
dc.contributor.author Akylbekova, A.
dc.contributor.author Usseinov, A.
dc.contributor.author Kozlovskyi, A.
dc.contributor.author Baymukhanov, Z.
dc.contributor.author Giniyatova, Sh.
dc.contributor.author Popov, A.I.
dc.contributor.author Dauletbekova, A.
dc.date.accessioned 2023-09-21T06:38:39Z
dc.date.available 2023-09-21T06:38:39Z
dc.date.issued 2020
dc.identifier.issn 0168-583X
dc.identifier.uri http://rep.enu.kz/handle/enu/7523
dc.description.abstract ZnSe2O5 nanocrystals with an orthorhombic structure were synthesized by electrochemical deposition into a-SiO2/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 107 ions/cm2. The lattice parameters determined by the X-ray diffraction and calculated by the CRYSTAL computer program package are very close to each other. It was shown that ZnSe2O5 has a direct band gap of 2.8 eV at the Γ-point. In addition, the calculated charge distribution and chemical bonds show that the crystal has an ion-covalent nature. The photoluminescence excited by photons at 300 nm has a low intensity arising mainly due to zinc and oxygen vacancies. ru
dc.language.iso en ru
dc.publisher Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms ru
dc.relation.ispartofseries Volume 476;Pages 10 - 13
dc.subject Ab initio ru
dc.subject Ion track ru
dc.subject Luminescence ru
dc.subject Track template ru
dc.subject ZnSe2O5 ru
dc.title Ion track template technique for fabrication of ZnSe2O5 nanocrystals ru
dc.type Article ru


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